T. Nazarov

1 ta ish

Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)

1. The influence of structural defects of Si on height of potential barrier Mo - Si

   T. Nazarov

   MaqolaSemiconductor materials and interfaces19950 iqtibos

   ABIABI:AkademIndex/openalex/1995.article.000172