S.Z. Zajnabidinov

6 ta ish

Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)

1. Vanadium diffusion in silicon

   G.K. Azimov, S.Z. Zajnabidinov, Yu. I. Kozlov

   MaqolaAdvanced Materials Characterization Techniques19890 iqtibos

   ABIABI:AkademIndex/openalex/1989.article.000149

2. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

   A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

   MaqolaIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 iqtibos

   ABIABI:AkademIndex/openalex/1992.article.000178

3. Dynamic tensor sensitivity of Si samples

   S.Z. Zajnabidinov, Azizbek Abduraimov, O.O. Mamankarimov +3

   MaqolaForce Microscopy Techniques and Applications19950 iqtibos

   ABIABI:AkademIndex/openalex/1995.article.000178

4. Silicon doped by rare earth elements - prospective material of microelectronics

   Kh.S. Daliev, S.Z. Zajnabidinov

   MaqolaSemiconductor materials and interfaces19950 iqtibos

   ABIABI:AkademIndex/openalex/1995.article.000179

5. The capacitance and IR-spectroscopy of defects in silicon and silicon structures

   S.Z. Zajnabidinov, Kh.S. Daliev

   MaqolaThermography and Photoacoustic Techniques19950 iqtibos

   ABIABI:AkademIndex/openalex/1995.article.000180

6. Structure and composition of admixture precipitates of nickel in silicon

   S.Z. Zajnabidinov, N. A. Turgunov, Alisher Baxadirov

   MaqolaMaterial Properties and ApplicationsUzbekiston Fizika Zhurnali20000 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000319