V. A. Perevoshchikov

1 ta ish

Scientific-Research Physicotechnical Institute, N. I. Lobachevskii Nizhnii Novgorod State University, Nizhnii Novgorod

1. Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation

   V. A. Perevoshchikov, V. D. Skupov

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000058