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S.V. Martynchenko

7 ta ish

AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

  1. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    MaqolaGraphite, nuclear technology, radiation studies19950 iqtibos
    ABI

  2. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    MaqolaSilicon and Solar Cell Technologies19970 iqtibos
    ABI

  3. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    MaqolaSilicon and Solar Cell Technologies19970 iqtibos
    ABI

  4. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

    M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

    MaqolaSemiconductor materials and interfacesMRS Proceedings19980 iqtibos
    ABI

  5. Characteristics of the formation of radiation defects in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    MaqolaGraphite, nuclear technology, radiation studiesTechnical Physics19990 iqtibos
    ABI

  6. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    MaqolaSemiconductor materials and interfaces19990 iqtibos
    ABI

  7. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    MaqolaSilicon and Solar Cell Technologies19990 iqtibos
    ABI