M. Tajibaev

1 ta ish

Ferganskij Politekhnicheskij Inst., Fergana (Uzbekistan)

1. Influence of oriented deformation on deep level radiation defects in silicon

   N.A. Sultanov, M. Tajibaev

   MaqolaSilicon and Solar Cell Technologies19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000297