A. I. Veı̆nger

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A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia

1. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000005