A.I. Babanin

1 ta ish

Ioffe Physicotechnical Institute RAS

1. Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions

   Konstantin Vassilevski, Konstantinos Zekentes, George Konstantinidis +3

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000062