Konstantinos Zekentes

6 ta ish

Foundation for Research and Technology-Hellas(FORTH)

1. Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions

   Konstantin Vassilevski, Konstantinos Zekentes, George Konstantinidis +3

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000062

2. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

   Roumen Kakanakov, Liliana Kassamakova, N. Hristeva +3

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000127

3. Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability

   L. Kassamakova-Kolaklieva, Roumen Kakanakov, V. Cimalla +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000211

4. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

   G. Sarov, Roumen Kakanakov, T. Cholakova +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000241

5. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000320

6. About the Nature of Recombination Current in 4H-SiC pn Structures

   Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000217