Roumen Kakanakov

4 ta ish

Bulgarian Academy of Sciences

1. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

   Roumen Kakanakov, Liliana Kassamakova, N. Hristeva +3

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000127

2. Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability

   L. Kassamakova-Kolaklieva, Roumen Kakanakov, V. Cimalla +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000211

3. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

   G. Sarov, Roumen Kakanakov, T. Cholakova +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000241

4. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000320