V. Ivantsov

2 ta ish

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000164

2. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   MaqolaSemiconductor materials and devicesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000245