L. S. Granitsyna

1 ta ish

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politeknicheskaya ul. 26, St. Petersburg, 194021, Russia

1. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

   O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

   MaqolaThin-Film Transistor TechnologiesSemiconductors20010 iqtibos

   ABIABI:AkademIndex/openalex/2001.article.000249