M. V. Ardyshev

1 ta ish

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, pl. Revolyutsii 1, Tomsk, 634050, Russia

1. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

   V. M. Ardyshev, M. V. Ardyshev

   MaqolaSemiconductor materials and interfacesSemiconductors20020 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000046