T. Blank

1 ta ish

Ioffe Physicotechnical Institute RAS

1. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

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   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.603414