V. I. Dimitrov

1 ta ish

Fatih University

1. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000320