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N. B. Strokan

10 ta ish

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 iqtibos
    ABI

  2. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    MaqolaParticle Detector Development and PerformanceMaterials science forum20051 iqtibos
    ABI

  3. Determination of the uniformity of the carrier lifetime in a material from the profile of the amplitude spectrum of an ion detector

    N. B. Strokan

    MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos
    ABI

  4. Behavior of epitaxial GaAs layers as α particle detectors

    V. M. Botnaryuk, Yu. V. Zhilyaev, А. М. Иванов +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos
    ABI

  5. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 iqtibos
    ABI

  6. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  7. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  8. Radiation Hard Devices Based on SiC

    Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos
    ABI

  9. 4H-SiC High Temperature Spectrometers

    Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos
    ABI

  10. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 iqtibos
    ABI