S. N. Grinyaev

1 ta ish

Kuznetsov Physicotechnical Institute at the Tomsk State University, pl. Revolyutsii 1, Tomsk, 634034, Russia

1. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

   V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

   MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000120