A. K. Karakhodzhaev

4 ta ish

M. Ulugbek National University of Uzbekistan, Tashkent, Republic of Uzbekistan

1. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

   M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

   MaqolaAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20091 iqtibos

   ABIABI:AkademIndex/openalex/2009.article.000313

2. On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>

   Sh. Makhkamov, M. Kаrimov, A. O. Kurbanov +2

   MaqolaSilicon and Solar Cell TechnologiesRussian Physics Journal20051 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.500801

3. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

   M. Kаrimov, A. K. Karakhodzhaev

   MaqolaSemiconductor materials and interfacesRussian Physics Journal20010 iqtibos

   ABIABI:AkademIndex/openalex/2001.article.000182

4. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

   M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

   MaqolaSilicon and Solar Cell TechnologiesRussian Physics Journal20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000333