Sh. D. Sultonov
1 ta ish
Ferghana Polytechnic Institute (Uzbekistan)
<title>Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)</title>
A. M. Rasulov, A.A. Dzhurakhalov, F. F. Umarov +2
MaqolaIon-surface interactions and analysisProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20050 iqtibosABI