<title>Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)</title>
A. M. RasulovFerghana Polytechnic Institute (Uzbekistan)A.A. DzhurakhalovArifov Institute of Electronics (Uzbekistan)F. F. UmarovAlmaty Technological Univ. (Kazakhstan)Sh. D. SultonovFerghana Polytechnic Institute (Uzbekistan)A. A. KhaydarovFerghana Polytechnic Institute (Uzbekistan)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEjournal2005en
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A comparative study of 1-5 keV P+ ions channeling in thin (dZ=5OOÅ) and thick Si(110), SiC(110), GaP(110) and AsGa(110) crystals has been carried out by computer simulation within binary collision approximation. The ion ranges, energy losses, angular and energy distributions, as well as depth profile distribution have been calculated. It was shown that for paraxial part of a beam the main contribution to the total energy losses comes from inelastic ones. It has been established that energy and depth profile distributions depend on width of channel in the direction <110> and mass of target atoms.
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