I. I. Farbshteǐn

3 ta ish

Ioffe Physicotechnical Institute RAS

1. Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals

   V. A. Berezovets, I. I. Farbshteǐn, R. V. Parfeniev +2

   MaqolaPhase-change materials and chalcogenidesMaterials science forum20061 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000253

2. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

   R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

   MaqolaPhase-change materials and chalcogenidesMaterials science forum20001 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.654952

3. Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions

   I. I. Farbshteǐn, A. V. Chernyaev, D. V. Shamshur +1

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000407