S.I. Lashaev

1 ta ish

Ioffe Institute of RAS

1. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

   ABIABI:AkademIndex/openalex/2007.article.000197