Gaetano Foti

2 ta ish

Catania University

1. Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

   G. Bertuccio, S. Caccia, F. Nava +7

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 iqtibos

   ABIABI:AkademIndex/openalex/2009.article.000101

2. Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

   Donatella Puglisi, Gaetano Foti, G. Bertuccio

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 iqtibos

   ABIABI:AkademIndex/openalex/2009.article.000420