Mahkam Halillaev

1 ta ish

Department of Physics, Urganch State University, Urganch, Uzbekistan

1. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   BobSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 iqtibos

   ABIABI:AkademIndex/openalex/2013.chapter.000013