Iftixorjon Isaqovich Yulchiev
2 ta ish
Farg’ona Polytechnic Institute, Farg’ona, 150107, Uzbekistan
Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field
N. Kh. Yuldashev, Iftixorjon Isaqovich Yulchiev, Bozorboy Joboraliyevich Akhmadaliev +1
MaqolaSemiconductor Quantum Structures and DevicesJournal of Applied Mathematics and Physics20240 iqtibosABI