O. P. Pchelyakov

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Rzhanov Institute of Semiconductor Physics, National Research Tomsk State University

1. PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES

   А. И. Никифоров, В.А. Тимофеев, A. I. Yakimov +5

   MaqolaPhotonic and Optical Devices«Узбекский физический журнал»20180 iqtibos

   ABIABI:AkademIndex/openalex/2018.article.001124