PSEUDOMORPHIC GeSiSn LAYERS IN STRAINED HETEROSTRUCTURES

The formation of pseudomorphous GeSiSn layers directly on Si have been investigated. The transition from two-dimensional growth regime to three-dimensional of the GeSiSn film on Si(100) was studied for different mismatch with silicon and growth temperatures. A possibility of synthesis of multilayer structures by molecular beam epitaxy was shown. The crystal lattice constants were determined using the high-resolution transmission electron microscopy and X-ray diffractometry. The p-i-n-diodes based on multilayer GeSiSn/Si structures were created which demonstrated the photoresponse increasing by several orders of magnitude in comparison the Sn-free structures at an increase in the Sn content. Nanostructures based on GeSiSn layers have demonstrated the photoluminescence at 0.6−0.85 eV.

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