N. M. Mustafaeva

3 ta ish

Karimov Tashkent State Technical University, 100095, Tashkent, Uzbekistan

1. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

   Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

   MaqolaPhotocathodes and Microchannel PlatesTechnical Physics20198 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.232443

2. Emissivity of Laser-Activated Pd–Ba Alloy

   S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

   MaqolaLaser Material Processing TechniquesTechnical Physics20195 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.232442

3. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

   S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

   MaqolaIon-surface interactions and analysisAIP conference proceedings20224 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.232444