Yuldoshali Ravshanov

1 ta ish

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Uzbekistan.

1. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

   MaqolaSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20200 iqtibos

   ABIABI:AkademIndex/openalex/2020.article.005153