Б. О. Исаков

1 ta ish

Tashkent State Technical University , 100095 Tashkent , Uzbekistan ,

1. Influence OF Impurity Atoms OF Gallium AND Antimony on the Concentration OF Optically Active Oxygen in the Silicon Lattice

   Б. О. Исаков, B.R. Rakhmonov, S. N. (Sh) Subkhonberdiev

   BoshqaNeliti20200 iqtibos

   ABIABI:AkademIndex/openalex/2020.other.000074