S. A. Blokhin

1 ta ish

Ioffe Institute, Saint-Petersburg, Russia

1. Extremely high frequency Schottky diodes based on single GaN nanowires

   K Yu Shugurov, А М Можаров, Vladimir V. Fedorov +3

   MaqolaGaN-based semiconductor devices and materialsNanotechnology20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001338