Muhammad Faisal Hayat

2 ta ish

Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan

1. Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

   Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah +8

   MaqolaAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20244 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.118042

2. Unveiling cutting-edge developments: architectures and nanostructured materials for application in optoelectronic artificial synapses

   Sattam Al Otaibi, Naveed Ur Rahman, Muhammad Faisal Hayat +10

   Sharh maqolaAdvanced Memory and Neural ComputingNanoscale20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.review-article.000015