N. B. Khaytimmetov

2 ta ish

Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Republic of Uzbekistan

1. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003369

2. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   MaqolaSilicon and Solar Cell TechnologiesE3S Web of Conferences20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.005652