D. S. Pulatova

1 ta ish

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Structural Features of Silicon with Tin Impurity

   Sharifa B. Utamuradova, Bakhodir B. Bokiyev, D. S. Pulatova

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003699