K. Munirathnam

1 ta ish

Department of Physics, School of Applied Sciences REVA University, Bengaluru 560064, India

1. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

   Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

   MaqolaSemiconductor materials and interfacesPhysica B Condensed Matter20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.001641