Ezhakudiyan Ravindran

1 ta ish

Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Chennai, Tamil Nadu-60323. India

1. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

   Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

   MaqolaSemiconductor materials and interfacesPhysica B Condensed Matter20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.001641