Sh Utamuradova

1 ta ish

Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100057, Tashkent, Uzbekistan

1. The Influence of γ-Irradiation on the Current Transport Mechanism upon the Application of Reverse Bias to the Al/p-CdTe/Mo Structure

   A. S. Achilov, R. R. Kabulov, O. A. Abdulkhaev +4

   MaqolaAdvanced Semiconductor Detectors and MaterialsSurface Engineering and Applied Electrochemistry20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.010008