Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum

1 ta ish

Jurnal · ISSN 1012-0386

1. Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

   M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk

   MaqolaSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum19930 iqtibos

   ABIABI:AkademIndex/openalex/1993.article.000131