Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films
S. A. AzimovS. V. Starodubtsev Physico‐Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentD. A. AronovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentV. M. RubinovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentM. TuichievS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent
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