Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

1. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   MaqolaSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 iqtibos

   ABIABI:AkademIndex/1983.article.000076

2. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   MaqolaSurface and Thin Film Phenomenaphysica status solidi (a)19840 iqtibos

   ABIABI:AkademIndex/1984.article.000100