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ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

Yusuke MizokawaYusuke Mizokawa graduated from Osaka University, Faculty of Engineering, Dept. of Electronic Engineering in 1968. Obtained M.E. and Dr. of Engineering degrees from Osaka University. Prior to joining the College of Integrated Arts and Sciences, University of Osaka Prefecture, in 1983, he held a position with the Junior College of Engineering of the same University. For the past 20 years, Dr. Mizokawa has been involved in research on gas adsorption onto oxide semiconductor, characterization of 3-5 semiconductor surfaces and their interfaces with insulator films by electron spectroscopy. For ten months from December 1984, he was a Visiting Faculty member at Dept. of Electrical Engineering, Colorado State University, where he studied characterization of 8-Sic surfaces and diamond-likecarbon-filmsurfaces using ESCA and AES with Professor C.W. Wilmsen. He is a member of The Japan Society of Applied Physics, The Surface Science Society of Japan, The American Vacuum Society, and The American Physics SocietyOsamu KomodaTatsuro Miyasato graduated from Tokyo Institute of Technology, Faculty of Science and Technology, Dept. of Applied Physics in 1965. He completed his doctoral requirements at Osaka University in 1972. In the same year he joined the staff of The Institute of Scientific and Industrial Research, Osaka University and received a Doctor of Science degree from the same university. He has been involved in research on physics of semiconductor using phonon spectroscopy with ultrasonic wave and ballistic heat pulse. For two years, from 1975, he was a Visiting Faculty member at Lancaster University, U.K. Currently, he is developing a fabrication technique for a diamond-likecarbonfilmusinghydrogen reactive sputtering. He is a member of American Physics Society, Physics Society of Japan and The Japan Society of Applied PhysicsTatsuro MiyasatoOsamu Komoda joined the Junior College of Engineering, University of Osaka Prefecture in 1966 and engaged in research on the application of varying speed and constant frequency power generating systems using thyristors. He received a B.E. degree in Electrical Engineering from Osaka City University in 1978, where he studied computer simulation of the auditory nervous system. He is presently a research engineer at College of Integrated Arts and Sciences, University of Osaka Prefecture. He has worked on the passivation of 3-5 semiconductor surfaces with Dr. Y. Mizokawa. He is a member of The Japan Society of Applied Physics and The Institute of Electronics and Communication Engineers of JapanShigehiko HasegawaInstitute of Scientific and Industrial Research, Osaka University, Ibaraki, Japan 567Masao TokumuraThe University of OsakaShōgo NakamuraInstitute of Scientific and Industrial Research, Osaka University, Ibaraki, Japan 567

Electronics and Communications in Japan (Part II Electronics)journal1987en

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ABI

Annotatsiya

Abstract Diamond‐like carbon (DLC) films were deposited on silicon wafers by hydrogen gas reactive dc‐sputtering of graphite and fabricated MIS diodes. ESCA chemical depth profiles showed that almost no impurities such as oxygen and nitrogen were present in the bulk of DLC films. In the interfacial region between DLC and Si substrate, a small amount of Si‐C bonding as well as natural oxide of silicon were detected. It is found that the 1st‐derivative spectrum of C‐KLL Auger line in ESCA from the DLC film surface was very similar to the C‐KLL AES spectrum from natural diamond. This suggests that DLC film has a fairly diamond‐like tetrahedral sp 3 C‐C bonding configuration. The C‐V curves of the Hg/DLC/Si MIS diodes showed accumulation, depletion and inversion characteristics. The charge trapped in DLC film and the interface state density distribution as a function of the surface potential were obtained first. Both the amount of trapped charge and the C‐V hysteresis were considerably smaller compared to an Si 3 N 4 /Si diode. The interface state density curve exhibits a “U” shape and the minimum density was less than 3 × 10 10 /cm 2 /eV in the vicinity of the mid‐band gap.

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Diamond and Carbon-based Materials Research Semiconductor materials and devices Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.1002/ecjb.4420700105

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