Injection and recombination currents in a-Si: H structures
O. A. GolikovaA. F. Ioffe, Physico-Technical Institute, Academy of Sciences of the USSR, LeningradMargarita M. MezdroginaA. F. Ioffe, Physico-Technical Institute, Academy of Sciences of the USSR, LeningradН. А. ФеоктистовA. F. Ioffe, Physico-Technical Institute, Academy of Sciences of the USSR, LeningradK. L. SorokinaA. F. Ioffe, Physico-Technical Institute, Academy of Sciences of the USSR, LeningradМ. М. КазанинA. F. Ioffe, Physico-Technical Institute, Academy of Sciences of the USSR, LeningradP. M. Karageorgy‐AlkalaevPhysico‐Technical Institute, Academy of Sciences of the UzSSR, TashkentA. Yu. LeĭdermanPhysico-Technical Institute, Academy of Sciences of the UzSSR, Tashkent
1988en
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ABI
Annotatsiya
Both, theoretical and experimental investigations of current-voltage characteristics of a-Si:H structures (Pt-i-n, p-i-n) are carried out. A choice in favour of the double-carrier injection mechanism is substantiated. A theory of G-R currents is applied to a semiconductor with a continuous density of localized states in the mobility gap.
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