Н. А. Феоктистов

6 ta ish

Fizika-Texnika Instituti

1. Excitons in ZnP2 crystals in the electric field of a Schottky barrier

   S. O. Romanovskii, А. В. Селькин, I.G. Stamov +1

   Maqola19983 iqtibos

   ABIABI:AkademIndex/2026.other.640714

2. Injection and recombination currents in a-Si: H structures

   O. A. Golikova, Margarita M. Mezdrogina, Н. А. Феоктистов +4

   Maqola19880 iqtibos

   ABIABI:AkademIndex/1988.article.000261

3. Bolometric properties of silicon thin-film structures fabricated by plasmachemical vapor-phase deposition

   V. Yu. Zerov, Yu. V. Kulikov, V. G. Malyarov +2

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000171

4. Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix

   V. N. Bogomolov, В. Г. Голубев, Н. Ф. Картенко +6

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000042

5. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   MaqolaThin-Film Transistor TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000167

6. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

   V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000174