Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm
V. B. VoronkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,V. G. Golubev“V. G. Khlopin Radium Institute” Scientific-Industrial Organization, St. PetersburgН. И. ГоршковA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. В. МедведевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. Б. Певцов“V. G. Khlopin Radium Institute” Scientific-Industrial Organization, St. PetersburgD.N. Suglobov“V. G. Khlopin Radium Institute” Scientific-Industrial Organization, St. PetersburgН. А. ФеоктистовPhysicotechnical Institute
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For the first time standard low-temperature (< 300 °C) plasma-enhanced chemical vapor deposition technology has been used to obtain a-Si(Er):H films emitting at 1.54 μm at room temperature. The fluorine-containing metalorganic compound Er(HFA)3*DME, exhibiting enhanced volatility and fairly good thermal stability, was used for the first time as the Er source. The establishment of photoconduction in the synthesized samples indicates that they are of satisfactory electronic quality and potentially useful for developing light-emitting diodes at 1.54 μm.
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