V. B. Voronkov

3 ta ish

Fizika-Texnika Instituti

1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   MaqolaThin-Film Transistor TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000167

2. Direct bonding of silicon wafers with a diffusion layer

   V. B. Voronkov, E. G. Guk, В. А. Козлов +1

   Maqola3D IC and TSV technologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000270

3. Deep diffusion doping of macroporous silicon

   E. V. Astrova, V. B. Voronkov, I. V. Grekhov +2

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000045