V. G. Golubev

2 ta ish

Fizika-Texnika Instituti

1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   MaqolaThin-Film Transistor TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000167

2. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

   V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000174