А. В. Медведев

3 ta ish

Russian Economic University after G.V. Plekhanov

1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   MaqolaThin-Film Transistor TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000167

2. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

   V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000174

3. DIGITAL TWINS OF TERRITORIES TO SUPPORT DECISION-MAKING IN THE FIELD OF REGIONAL SOCIO-ECONOMIC DEVELOPMENT

   А. В. Медведев

   MaqolaOAOchiq kirish20200 iqtibos

   ABIABI:AkademIndex/2020.article.006667