Maqola

Growth of InAs photodiode structures from metalorganic compounds

S. S. KizhaevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhaĭlovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,C. C. MolchanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,N. D. StoyanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,Yu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

Technical Physics Lettersjournal1998en

Ochiq kirish: yoʻq

ABI

Annotatsiya

InAs layers were grown on p-InAs substrates by epitaxy from metalorganic compounds. Photodiodes were fabricated using the p-n junctions obtained. The current-voltage, capacitance-voltage, and spectral characteristics of the photodiode structures were investigated.

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Mavzular

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Machine Learning in Materials Science

Identifikatorlar

DOI: 10.1134/1.1262072

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