Yu. P. Yakovlev

21 ta ish

Fizika-Texnika Instituti

1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

   K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 iqtibos

   ABIABI:AkademIndex/1998.article.000055

2. 3.3-μm LEDs for measuring methane

   А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000046

3. Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000103

4. Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure

   K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000128

5. Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

   K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000151

6. 1.94-μm light-emitting diodes for moisture-content measurements

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000158

7. Power characteristics of 2.2 μm LEDs for spectroscopic applications

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000187

8. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

   В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000204

9. 2.2 μm cw single-mode diode lasers with thermoelectric cooling

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000233

10. Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure

    E. A. Grebenshchikova, O. G. Ershov, B. E. Zhurtanov +3

    MaqolaSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 iqtibos

    ABIABI:AkademIndex/1997.article.000246

11. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

    T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

    ABIABI:AkademIndex/1997.article.000257

12. InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

    А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

    MaqolaAtmospheric and Environmental Gas DynamicsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000045

13. 2.35 μm LEDs for measuring methane

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000054

14. Growth of InAs photodiode structures from metalorganic compounds

    S. S. Kizhaev, M. P. Mikhaĭlova, C. C. Molchanov +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000119

15. Formation of optoelectronic structures based on InAsSb/InAsSbP solid solutions

    E. A. Grebenshchikova, A. M. Litvak, V. V. Sherstnev +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000131

16. Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

    T. N. Danilova, O. I. Evseenko, A. N. Imenkov +4

    MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000188

17. Mechanisms of photocurrent amplification in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures

    S. V. Slobodchikov, Х. М. Салихов, Yu. P. Yakovlev +1

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000194

18. AlGaAsSb lasers emitting in the 1.6 μm region

    T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov +2

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 iqtibos

    ABIABI:AkademIndex/1999.article.000160

19. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

    V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

    MaqolaSemiconductor Quantum Structures and DevicesCrystal Research and Technology20020 iqtibos

    ABIABI:AkademIndex/2002.article.000109

20. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

    V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

    MaqolaAdvanced Semiconductor Detectors and MaterialsCrystal Research and Technology20020 iqtibos

    ABIABI:AkademIndex/2002.article.000182

21. Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure

    L. I. Burov, A. S. Gorbatsevich, M. Jadan +2

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Applied Spectroscopy20110 iqtibos

    ABIABI:AkademIndex/2011.article.000374