Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures
V. Vorlı́čekFZU ‒ Institute of Physics of the Academy of Sciences of the Czech RepublicK. D. MoiseevPhysicotechnical InstituteM. P. MikhaĭlovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. HuliciusFZU ‒ Institute of Physics of the Academy of Sciences of the Czech RepublicT. ŠimečekInstitute of Physics, Academy of Sciences of the Czech Republic, Praha
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Ga1-x InxAsySb1-y quaternary solid solutions lattice- matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs-like and (GaSb+InAs)-like mixture modes is discussed. The modified REI model developed by JAW et al. seems to describe the observed behaviour reasonably. Possibility of determination of the alloy composition from Raman spectra is considered.
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