V. V. Sherstnev

11 ta ish

Fizika-Texnika Instituti

1. 3.3-μm LEDs for measuring methane

   А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000046

2. Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000103

3. 1.94-μm light-emitting diodes for moisture-content measurements

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000158

4. Power characteristics of 2.2 μm LEDs for spectroscopic applications

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000187

5. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

   В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000204

6. 2.2 μm cw single-mode diode lasers with thermoelectric cooling

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000233

7. InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

   А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

   MaqolaAtmospheric and Environmental Gas DynamicsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000045

8. 2.35 μm LEDs for measuring methane

   А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000054

9. Formation of optoelectronic structures based on InAsSb/InAsSbP solid solutions

   E. A. Grebenshchikova, A. M. Litvak, V. V. Sherstnev +1

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000131

10. Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

    T. N. Danilova, O. I. Evseenko, A. N. Imenkov +4

    MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

    ABIABI:AkademIndex/1998.article.000188

11. Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure

    L. I. Burov, A. S. Gorbatsevich, M. Jadan +2

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Applied Spectroscopy20110 iqtibos

    ABIABI:AkademIndex/2011.article.000374